3G WCDMA POWER AMPLIFIER

 
   

Typical Applications

Mobile phones

Description
 

The design experience described here is for linear power amplifier designed for CDMA/WCDMA applications. This MMIC is designed on GaAs HBT process. The power amplifier has on-chip output matching and filtering circuit. It achieves 30 dBm output power with 30 dB rejection out of band. The amplifier has a low current consumption. The amplifier has a mode adjustment control so that current consumption, and hence the PAE, can be kept optimum under dynamic power control. The amplifier also has a on-chip temperature compensation and power down circuitry. The amplifier is terminated in differential 50 ohms.

Key Features
  • Temperature Compensation
  • Power down circuitry, low leakage current
  • Output power of 30 dBm
  • Power added efficiency >40% at 28 dBm pout
  • Low current consumption: 60 mA
  • 50 ohms output impedance
  • Mode control for better efficiency at low current
AC/DC Electrical Specifications

Note1 : Unless otherwise specified all parameters are at 25oC

Note2 : Exceeding absolute maximum ratings may damage MMIC
Table 1. Absolute Maximum Ratings

Table 2. Typical Electrical Characteristics

 

Block Diagram

 
Verification: Design
NOTE: Design specifications are subject to change. Anokiwave does not warranty any of the listed performance.