Presented is a GaAs monolithic mm-wave low noise amplifier for K-band applications. This is a 3-stage high-gain amplifier. This MMIC is designed on GaAs low-noise pHEMT technology that includes substrate vias, airbridges, thin film resistors and MIM caps.
Key Features
Low noise figure: 2.4 dB typical at 24 GHz
High associated gain: 22 dB typical @ 24 GHz
High output power: 12 dBm typical @ 24 GHz
Wide bandwidth (20-30 GHz)
Low current consumption: 60mA
Small chip size (1.1mm x 1.0mm x 0.8 mm)
AC/DC Electrical Specifications
Note1 : Unless otherwise specified all parameters are at 25 oC
Note2 : Exceeding absolute maximum ratings may damage MMIC
