K Band (20-30 GHz) Low Noise
Amplifier MMIC
Description
ANO-XXXXX is a GaAs monolithic
mm-wave low noise amplifier for K band applications.
This is a 3-stage high-gain amplifier. This MMIC is designed on GaAs
low-noise
pHEMT technology that includes substrate vias, airbridges, thin film
resistors and MIM caps.
The part is available in chip and LGA/BGA package form and
is compatible with
automated assembly techniques.
Key
Features
n
Low
Noise Figure: 2.4 dB typical at 24 GHz
n
High
Associated Gain: 22 dB typical @ 24 GHz
n
High
Output Power: 12 dBm typical @ 24 GHz
n
Wide
bandwidth (20-30 GHz)
n
Low
Current consumption: 60mA
n
Small
chip size (1.3mm x 1.2mm x 0.8 mm)
n
LGA/BGA
Package : 3mmx3mm
Specifications
Note1 :
unless otherwise specified all parameters are at 25 oC
Note2 :
exceeding absolute maximum ratings may damage MMIC
Maximum Operating Temperature
|
Absolute
Maximum Ratings |
Symbol |
Rating |
Units |
|
Maximum
Input power |
Pin |
-3 |
dBm |
|
Positive
supply voltage |
VDD |
4 |
Volts |
|
Negative
supply voltage |
VGG |
-1 |
Volts |
|
Storage
temperature |
Tstg |
125 |
oC |
Recommended Operating conditions
|
Operating
Parameters |
Symbol |
Min |
Typ |
Max |
Units |
Comments |
|
Positive
supply voltage |
VDD |
|
3 |
|
Volts |
|
|
Positive
supply current |
IDD |
|
60 |
|
mA |
|
|
Negative
supply voltage |
VGG |
|
-0.3 |
|
Volts |
|
|
Operating
temperature |
Tc |
-40 |
25 |
85 |
oC |
|
|
Storage temperature |
Tstg |
-40 |
25 |
85 |
oC |
|
Electrical
Characteristics
Test Conditions: Freq 26
GHz, VDD=3V, IDD=60mA typ, Zs=50 W and ZL=50 W
|
Parameters |
Symbol |
Min |
Typ |
Max |
Units |
Comments |
|
Input
frequency |
InFreq |
20 |
|
30 |
GHz |
|
|
Output frequency |
OutFreq |
20 |
|
30 |
GHz |
|
|
Input
power |
Pin |
|
|
-3 |
dBm |
|
|
Output
power |
Pout |
|
12 |
|
dBm |
1 dB
compression |
|
Output 3rd order intercept |
IP3out |
|
24 |
|
dBm |
|
|
Associated
Gain |
Gas |
|
22 |
|
dB |
|
|
Gain flatness |
|
|
|
<2 |
dB |
|
|
Noise
figure |
NF |
|
2.4 |
|
|
|
|
Input
return loss |
RLin |
|
10 |
|
dB |
50 Ohms |
|
Output
return loss |
RLout |
|
10 |
|
dB |
50 Ohms |
|
Stability
Factor |
K |
1 |
|
|
|
Unconditionally
stable |
|
Stability
Measure |
B |
0 |
|
|
|
Unconditionally
stable |
ESD
|
ESD |
Class 0 |
~199V |
CASE STYLE
|
Case |
LGA/BGA |
TARGET APPLICATION
24 GHz
AUTOMOTIVE RADAR
Chip
Dimensions / Layout Cartoon/ Pin Configuration
Units = um
Chip Size = 1500 x 1300
Chip thickness = 600
RF Pads (1,4) = 100 x 100
DC Pads (2,3) = 100 x 100
|
Pin
number |
Pin name |
Description |
|
1 |
RF_IN |
Input
port |
|
2 |
V+ |
Positive
voltage supply |
|
3 |
V- |
Negative
voltage supply |
|
4 |
RF_OUT |
Output
port |
Package Type BGA/LGA (SIZE :
3mmx 3mm)